IPP05CN10N Datasheet - Infineon

IPP05CN10N, Power-Transistor

IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS®2 Power-Transistor

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 100 V 5.1 mΩ 100 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qu

IPP05CN10N-Infineon.pdf