PTFA212001E Datasheet, Fet, Infineon

PTFA212001E Features

  • Fet include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent

PDF File Details

Part number:

PTFA212001E

Manufacturer:

Infineon ↗

File Size:

391.34kb

Download:

📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in th

Datasheet Preview: PTFA212001E 📥 Download PDF (391.34kb)
Page 2 of PTFA212001E Page 3 of PTFA212001E

PTFA212001E Application

  • Applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flang

TAGS

PTFA212001E
Thermally-Enhanced
High
Power
LDMOS
FET
Infineon

📁 Related Datasheet

PTFA212001F - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA21.

PTFA212002E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description The PTFA212002E is a 200-watt, internally-matched, latera.

PTFA212401E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFA212401E and PTFA21.

PTFA212401F - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFA212401E and PTFA21.

PTFA210301E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110 – 2170 MHz Description The PTFA210301E is a thermally-enhanced, 30-watt, internall.

PTFA210601E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LD.

PTFA210601F - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LD.

PTFA210701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz PTFA210701E PTFA210701F Description The.

PTFA210701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz PTFA210701E PTFA210701F Description The.

PTFA211001E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, interna.

Stock and price

Infineon Technologies AG
RF MOSFET LDMOS 30V H-36260-2
DigiKey
PTFA212001EV4R0XTMA1
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts