PTFA212001E Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 * 2170 MHz .
The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MH.

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Datasheet Specifications

Part number: PTFA212001E
Manufacturer: Infineon ↗
File Size: 391.34 KB
Datasheet: PTFA212001E-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212001E Package H-36260-2 PTFA212001F Package H-37260-2 PTFA212

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PTFA212001E Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFA212001E-like datasheet