PTFA212401F, PTFA212401E Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 * 2170 MHz .
The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MH.

📥 Download Datasheet

PTFA212401F Datasheet Preview — This datasheet PDF includes multiple part numbers: PTFA212401F, PTFA212401E. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: PTFA212401F, PTFA212401E
Manufacturer: Infineon ↗
File Size: 483.04 KB
Datasheet: PTFA212401E-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET
Note: This datasheet PDF includes multiple part numbers: PTFA212401F, PTFA212401E.
Please refer to the document for exact specifications by model.

Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212401E Package H-36260-2 PTFA212401F Package H-37260-2 PTFA212

PTFA212401F Distributors

📁 Related Datasheet

PTFA220121M PTFA PTFA080551E PTFA080551F PTFA142401EL PTFA142401FL

📌 All Tags

PTFA212401E Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFA212401F-like datasheet