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PTFA212401F, PTFA212401E Thermally-Enhanced High Power RF LDMOS FET

PTFA212401F Description

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 * 2170 MHz .
The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MH.

PTFA212401F Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212401E Package H-36260-2 PTFA212401F Package H-37260-2 PTFA212

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PTFA212401F, PTFA212401E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PTFA212401F, PTFA212401E
Manufacturer
Infineon ↗
File Size
483.04 KB
Datasheet
PTFA212401E-Infineon.pdf
Description
Thermally-Enhanced High Power RF LDMOS FET
Note
This datasheet PDF includes multiple part numbers: PTFA212401F, PTFA212401E.
Please refer to the document for exact specifications by model.

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTFA212401F-like datasheet