PTFA212401E Datasheet, Fet, Infineon

✔ PTFA212401E Features

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices pro

✔ PTFA212401E Application

in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages wi

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PTFA212401E

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in th

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Infineon Technologies AG

RF MOSFET LDMOS 30V H-36260-2

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PTFA212401E-V4-R250

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PTFA212401E Thermally-Enhanced High Power LDMOS FET Infineon