PTFA212401E - Thermally-Enhanced High Power RF LDMOS FET

Infineon

The PTFA212401E by Infineon is a Thermally-Enhanced High Power RF LDMOS FET. Below is the official datasheet preview.

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PTFA212401E Thermally-Enhanced High Power RF LDMOS FET by Infineon - Datasheet Preview — Official preview page of the **PTFA212401E** Thermally-Enhanced High Power RF LDMOS FET datasheet (Infineon).

Datasheet Details

Part number	PTFA212401E
Manufacturer	Infineon
File Size	483.04 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA212401E-Infineon.pdf
Additional preview pages of the PTFA212401E datasheet.

PTFA212401E Product details

Description

The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band.

Features

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212401E Package H-36260-2 PTFA212401F Package H-37260-2 PTFA212401E PTFA212401F Adjacent Channel Power Ratio (dB) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.

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Published: Feb 21, 2016 |