PTFA212001F, PTFA212001E - Thermally-Enhanced High Power RF LDMOS FET

Infineon

The PTFA212001F by Infineon is a Thermally-Enhanced High Power RF LDMOS FET. Below is the official datasheet preview.

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PTFA212001F Thermally-Enhanced High Power RF LDMOS FET by Infineon - Datasheet Preview — Official preview page of the **PTFA212001F** Thermally-Enhanced High Power RF LDMOS FET datasheet (Infineon).

Datasheet Details

Part number	PTFA212001F, PTFA212001E
Manufacturer	Infineon
File Size	391.34 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA212001E-Infineon.pdf
Note	This datasheet PDF includes multiple part numbers: PTFA212001F, PTFA212001E. Please refer to the document for exact specifications by model.
Additional preview pages of the PTFA212001F datasheet.

PTFA212001F Product details

Description

The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band.

Features

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212001E Package H-36260-2 PTFA212001F Package H-37260-2 PTFA212001E PTFA212001F IM3 (dBc), ACPR (dBc) Drain Efficiency (%) 2-Carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -23 30 -28 Eff.

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Published: Feb 21, 2016 |