PTFA212001F, PTFA212001E Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 * 2170 MHz .
The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MH.

📥 Download Datasheet

PTFA212001F Datasheet Preview — This datasheet PDF includes multiple part numbers: PTFA212001F, PTFA212001E. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: PTFA212001F, PTFA212001E
Manufacturer: Infineon ↗
File Size: 391.34 KB
Datasheet: PTFA212001E-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET
Note: This datasheet PDF includes multiple part numbers: PTFA212001F, PTFA212001E.
Please refer to the document for exact specifications by model.

Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212001E Package H-36260-2 PTFA212001F Package H-37260-2 PTFA212

PTFA212001F Distributors

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PTFA212001E Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFA212001F-like datasheet