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PTFA212001F, PTFA212001E Thermally-Enhanced High Power RF LDMOS FET

PTFA212001F Description

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 * 2170 MHz .
The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MH.

PTFA212001F Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212001E Package H-36260-2 PTFA212001F Package H-37260-2 PTFA212

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PTFA212001F, PTFA212001E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PTFA212001F, PTFA212001E
Manufacturer
Infineon ↗
File Size
391.34 KB
Datasheet
PTFA212001E-Infineon.pdf
Description
Thermally-Enhanced High Power RF LDMOS FET
Note
This datasheet PDF includes multiple part numbers: PTFA212001F, PTFA212001E.
Please refer to the document for exact specifications by model.

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTFA212001F-like datasheet