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PTFA212002E

Thermally-Enhanced High Power RF LDMOS FET

PTFA212002E Features

* ons are mm. Alternate dimensions are inches. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Preliminary Data Sheet 9 of 10 Rev. 02

PTFA212002E General Description

The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent .

PTFA212002E Datasheet (217.26 KB)

Preview of PTFA212002E PDF

Datasheet Details

Part number:

PTFA212002E

Manufacturer:

Infineon ↗

File Size:

217.26 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTFA212002E Thermally-Enhanced High Power LDMOS FET Infineon

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