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PTFA212002E Thermally-Enhanced High Power RF LDMOS FET

PTFA212002E Description

PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 * 2170 MHz .
The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET.

PTFA212002E Features

* ons are mm. Alternate dimensions are inches. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www. infineon. com/rfpower Preliminary Data Sheet 9 of 10 Rev. 02

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTFA212002E-like datasheet