Datasheet4U Logo Datasheet4U.com

PTFA212002E - Thermally-Enhanced High Power RF LDMOS FET

The PTFA212002E by Infineon is a Thermally-Enhanced High Power RF LDMOS FET. Below is the official datasheet preview.

📥 Download Datasheet

Official preview page of the PTFA212002E Thermally-Enhanced High Power RF LDMOS FET datasheet (Infineon).

Datasheet Details

Part number PTFA212002E
Manufacturer Infineon
File Size 217.26 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA212002E-Infineon.pdf
Additional preview pages of the PTFA212002E datasheet.

PTFA212002E Product details

Description

The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. carrier WCDMA Drive up VDD = 28 V, IDQ = 1600 mA, f1 = 2140 MHz, f2 =

Features

📁 PTFA212002E Similar Datasheet

  • PTFA220121M - High Power RF LDMOS Field Effect Transistor (Wolfspeed)
  • PTFA - Plug Type Fixed Attenuator (OPLINK)
  • PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
  • PTFA080551F - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
  • PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
Other Datasheets by Infineon
  • PTFA212001E - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA212001F - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA212401E - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA212401F - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA210301E - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA210601E - Thermally-Enhanced High Power RF LDMOS FET
Published: |