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ITCH25350D4 High Power RF LDMOS FET

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Description

Innogration (Suzhou) Co., Ltd.Document Number: ITCH25350D4 Preliminary Datasheet V1.0 2400-2500MHz, 350W, High Power RF LDMOS FETs .
The ITCH25350D4 is a 350-watt, internally matched LDMOS FETs, designed for Multiple use especially RF Energy application including cooking, heating an.

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Datasheet Specifications

Part number
ITCH25350D4
Manufacturer
Innogration
File Size
510.42 KB
Datasheet
ITCH25350D4-Innogration.pdf
Description
High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Excellent thermal stability, low HCI drift
* Compliant to Restriction of Haza

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