ITCH25180B2 High Power RF LDMOS FET

Innogration

Description

Innogration (Suzhou) Co., Ltd.Document Number: ITCH25180B2 Preliminar Datasheet V3.0 2400-2500MHz, 180W, High Power RF LDMOS FETs .
The ITCH25180B2 is a 180-watt, internally matched LDMOS FETs, designed for Multiple use especially RF Energy application including cooking, heating an.

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Datasheet Specifications

Part number: ITCH25180B2
Manufacturer: Innogration
File Size: 637.35 KB
Datasheet: ITCH25180B2-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Excellent thermal stability, low HCI drift
* Compliant to Restriction of Haza

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ITCH25180B2 High Power LDMOS FET Innogration

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