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IRF6619 DirectFET Power MOSFET

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Description

PD - 96917 www.DataSheet4U.com DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) l l l l l l l l IRF6619 Low Profile (<0.7 mm) .
The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

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Datasheet Specifications

Part number
IRF6619
Manufacturer
International Rectifier
File Size
315.20 KB
Datasheet
IRF6619_InternationalRectifier.pdf
Description
DirectFET Power MOSFET

Features

* IS AREA LIMITED BY R DS (on) 100µsec IRF6619 ISD , Reverse Drain Current (A) 100.0 TJ = 150°C TJ = 25°C TJ = -40°C 100 10.0 10 1msec 10msec 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 VSD , Source-to-Drain Voltage (V) 1 TA = 25°C Tj = 150°C Single Pulse 0.01 0.10 1.00 10.00 100.00 0.1 VDS , Drai

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best t

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