IRF6619 Datasheet - International Rectifier

IRF6619 DirectFET Power MOSFET

The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used i.

PD - 96917 www.DataSheet4U.com DirectFET Power MOSFET Typical values (unless otherwise specified) l l l l l l l l IRF6619 Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible 20V max ±20V max 1.65mΩ@ 10V 2.2mΩ@ 4.5V Ultra Low Package Inductance Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Optimized for High Frequency Switching above 1MHz Ideal for CPU Core DC-DC Converters 38nC 13nC 3.5nC 18nC 22nC 2.0V Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction .

IRF6619 Features

* IS AREA LIMITED BY R DS (on) 100µsec IRF6619 ISD , Reverse Drain Current (A) 100.0 TJ = 150°C TJ = 25°C TJ = -40°C 100 10.0 10 1msec 10msec 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 VSD , Source-to-Drain Voltage (V) 1 TA = 25°C Tj = 150°C Single Pulse 0.01 0.10 1.00 10.00 100.00 0.1 VDS , Drai

IRF6619_InternationalRectifier.pdf