Description
IRF6619PbF IRF6619TRPbF www.DataSheet4U.com PD - 97084 DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS Compliant l Lea.
The IRF6619PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.
Features
* = 25°C TJ = -40°C
100
10.0
10
1msec 10msec
1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 VSD , Source-to-Drain Voltage (V)
1
TA = 25°C Tj = 150°C Single Pulse 0.01 0.10 1.00 10.00 100.00
0.1 VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
180
VGS(th) Gate thresho
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t