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IRF6619TRPbF, IRF6619PbF DirectFET Power MOSFET

IRF6619TRPbF Description

IRF6619PbF IRF6619TRPbF www.DataSheet4U.com PD - 97084 DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) RoHS Compliant  l Lea.
The IRF6619PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.

IRF6619TRPbF Features

* = 25°C TJ = -40°C 100 10.0 10 1msec 10msec 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 VSD , Source-to-Drain Voltage (V) 1 TA = 25°C Tj = 150°C Single Pulse 0.01 0.10 1.00 10.00 100.00 0.1 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 180 VGS(th) Gate thresho

IRF6619TRPbF Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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This datasheet PDF includes multiple part numbers: IRF6619TRPbF, IRF6619PbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRF6619TRPbF, IRF6619PbF
Manufacturer
International Rectifier
File Size
314.09 KB
Datasheet
IRF6619PbF_InternationalRectifier.pdf
Description
DirectFET Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRF6619TRPbF, IRF6619PbF.
Please refer to the document for exact specifications by model.

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DirectFET Power MOSFET International Rectifier
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