IRF6629PBF DirectFET Power MOSFET

International Rectifier

Description

PD - 97235 www.DataSheet4U.com l l l l l l l l l IRF6629PbF IRF6629TRPbF DirectFET Power MOSFET RoHs Compliant Typical values (unless otherwis.
The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.

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Datasheet Specifications

Part number: IRF6629PBF
Manufacturer: International Rectifier
File Size: 299.19 KB
Datasheet: IRF6629PBF_InternationalRectifier.pdf
Description: DirectFET Power MOSFET

Features

* orward Voltage 200 180 160 ID, Drain Current (A) 3.0 Typical VGS(th) Gate threshold Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 1.5 ID = 100µA ID = 250µA 1.0 ID = 1.0mA ID

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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IRF6629PBF DirectFET Power MOSFET International Rectifier

International Rectifier IRF6629PBF-like datasheet