Description
PD - 97235 www.DataSheet4U.com l l l l l l l l l IRF6629PbF IRF6629TRPbF DirectFET Power MOSFET RoHs Compliant Typical values (unless otherwis.
The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.
Features
* orward Voltage
200 180 160
ID, Drain Current (A)
3.0
Typical VGS(th) Gate threshold Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
2.5
140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0
1.5
ID = 100µA ID = 250µA
1.0
ID = 1.0mA ID
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t