IRF6629TRPBF, IRF6629PBF Datasheet - International Rectifier

IRF6629TRPBF DirectFET Power MOSFET

The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used.

PD - 97235 www.DataSheet4U.com l l l l l l l l l IRF6629PbF IRF6629TRPbF DirectFET Power MOSFET RoHs Compliant Typical values (unless otherwise specified) Lead-Free (Qualified up to 260°C Reflow) VDSS VGS RDS(on) RDS(on) Application Specific MOSFETs 25V max ±20V max 1.6mΩ@ 10V 2.1mΩ@ 4.5V Ideal for CPU Core DC-DC Converters Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Low Conduction Losses 34nC 11nC 4.2nC 27nC 23nC 1.8V High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compat.

IRF6629TRPBF Features

* orward Voltage 200 180 160 ID, Drain Current (A) 3.0 Typical VGS(th) Gate threshold Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 1.5 ID = 100µA ID = 250µA 1.0 ID = 1.0mA ID

IRF6629PBF_InternationalRectifier.pdf