Datasheet4U Logo Datasheet4U.com

IRF6629TRPBF, IRF6629PBF DirectFET Power MOSFET

IRF6629TRPBF Description

PD - 97235 www.DataSheet4U.com l l l l l l l l l IRF6629PbF IRF6629TRPbF DirectFET™ Power MOSFET ‚ RoHs Compliant  Typical values (unless otherwis.
The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.

IRF6629TRPBF Features

* orward Voltage 200 180 160 ID, Drain Current (A) 3.0 Typical VGS(th) Gate threshold Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 1.5 ID = 100µA ID = 250µA 1.0 ID = 1.0mA ID

IRF6629TRPBF Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRF6629TRPBF, IRF6629PBF. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IRF6629TRPBF, IRF6629PBF
Manufacturer
International Rectifier
File Size
299.19 KB
Datasheet
IRF6629PBF_InternationalRectifier.pdf
Description
DirectFET Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRF6629TRPBF, IRF6629PBF.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

📌 All Tags

DirectFET Power MOSFET International Rectifier
International Rectifier IRF6629TRPBF-like datasheet