IRF6636 DirectFET Power MOSFET

International Rectifier

Description

PD - 96977B www.DataSheet4U.com IRF6636 DirectFET™ Power MOSFET Typical values (unless otherwise specified) RoHS compliant containing no lead or br.
The IRF6636 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

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Datasheet Specifications

Part number: IRF6636
Manufacturer: International Rectifier
File Size: 262.15 KB
Datasheet: IRF6636_InternationalRectifier.pdf
Description: DirectFET Power MOSFET

Features

* Source-Drain Diode Forward Voltage 90 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA VDS, Drain-to-Source Voltage (V) 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -5

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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IRF6636 DirectFET Power MOSFET International Rectifier

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