IRF6636 Datasheet - International Rectifier

IRF6636 DirectFET Power MOSFET

The IRF6636 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

PD - 96977B www.DataSheet4U.com IRF6636 DirectFET™ Power MOSFET Typical values (unless otherwise specified) RoHS compliant containing no lead or bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ultra Low Package Inductance 18nC 6.1nC 1.9nC 7.3nC 10nC 1.8V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for for Control FET socket of Sync. Buck Conver.

IRF6636 Features

* Source-Drain Diode Forward Voltage 90 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA VDS, Drain-to-Source Voltage (V) 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -5

IRF6636 Datasheet (262.15 KB)