Description
The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- .01 0.10 1.00 10.00 100.00
Fig 10. Typical Source-Drain Diode Forward Voltage
90
VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA
VDS, Drain-to-Source Voltage (V)
80 70
ID, Drain Current (A)
60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
120
EAS , Single Pulse Avalanche Energy (mJ).
IRF6636TRPBF Datasheet
