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IRF6636TRPBF, IRF6636PBF Datasheet - International Rectifier

IRF6636PBF-InternationalRectifier.pdf

This datasheet PDF includes multiple part numbers: IRF6636TRPBF, IRF6636PBF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IRF6636TRPBF, IRF6636PBF

Manufacturer:

International Rectifier

File Size:

306.20 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRF6636TRPBF, IRF6636PBF.
Please refer to the document for exact specifications by model.

IRF6636TRPBF, IRF6636PBF, Power MOSFET

The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries u

PD - 97219 IRF6636PbF IRF6636TRPbF l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 6.1nC RDS(on) Qgs2 1.9nC RDS(on) Qoss 10nC 20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@

IRF6636TRPBF Features

* .01 0.10 1.00 10.00 100.00 Fig 10. Typical Source-Drain Diode Forward Voltage 90 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA VDS, Drain-to-Source Voltage (V) 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 25 50 75 100

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