Description
PD - 97219 IRF6636PbF IRF6636TRPbF l l l l l l l l l RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal fo.
The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.
Features
* .01 0.10 1.00 10.00 100.00
Fig 10. Typical Source-Drain Diode Forward Voltage
90
VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA
VDS, Drain-to-Source Voltage (V)
80 70
ID, Drain Current (A)
60 50 40 30 20 10 0 25 50 75 100
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t