IRF6636PBF Datasheet - International Rectifier

IRF6636PBF Power MOSFET

The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries u.

PD - 97219 IRF6636PbF IRF6636TRPbF l l l l l l l l l RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 6.1nC RDS(on) Qgs2 1.9nC RDS(on) Qoss 10nC 20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ .

IRF6636PBF Features

* .01 0.10 1.00 10.00 100.00 Fig 10. Typical Source-Drain Diode Forward Voltage 90 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA VDS, Drain-to-Source Voltage (V) 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 25 50 75 100

IRF6636PBF Datasheet (306.20 KB)