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IRF6636PBF

Power MOSFET

IRF6636PBF Features

* .01 0.10 1.00 10.00 100.00 Fig 10. Typical Source-Drain Diode Forward Voltage 90 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA VDS, Drain-to-Source Voltage (V) 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 25 50 75 100

IRF6636PBF General Description

The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries u.

IRF6636PBF Datasheet (306.20 KB)

Preview of IRF6636PBF PDF

Datasheet Details

Part number:

IRF6636PBF

Manufacturer:

International Rectifier

File Size:

306.20 KB

Description:

Power mosfet.
PD - 97219 IRF6636PbF IRF6636TRPbF l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal fo.

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IRF6636PBF Power MOSFET International Rectifier

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