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IRF6726MTRPBF

Power MOSFET

IRF6726MTRPBF Features

* in-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 200 180 160 ID, Drain Current (A) Fig11. Maximum Safe Operating Area 3.0 2.5 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 100µA ID = 150µ

IRF6726MTRPBF General Description

The IRF6726MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries .

IRF6726MTRPBF Datasheet (274.14 KB)

Preview of IRF6726MTRPBF PDF

Datasheet Details

Part number:

IRF6726MTRPBF

Manufacturer:

International Rectifier

File Size:

274.14 KB

Description:

Power mosfet.
PD - 96121 IRF6726MPbF IRF6726MTRPbF l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Co.

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IRF6726MTRPBF Power MOSFET International Rectifier

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