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IRF6727MPBF Power MOSFET

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Description

PD - 96122 IRF6727MPbF IRF6727MTRPbF l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Co.
The IRF6727MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state re.

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Features

* 1 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 200 180 160 ID, Drain Current (A) Fig11. Maximum Safe Operating Area 3.0 2.5 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temp

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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