IRF6729MTRPBF Datasheet - International Rectifier

Power MOSFET

IRF6729MTRPBF Features

* ent (A) 100 100 10msec 10 DC 1 100µsec 1msec 10 T J = 150°C 1 T J = 25°C T J = -40°C VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-to-Drain Voltage (V) TA = 25°C TJ = 150°C Single Pulse 0.1 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Sourc

IRF6729MTRPBF General Description

The IRF6729MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries us.

IRF6729MTRPBF Datasheet (262.97 KB)

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IRF6729MTRPBF

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International Rectifier

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262.97 KB

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Power mosfet.
PD - 96229 HEXFET® Power MOSFET plus Schottky Diode RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Dio.

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IRF6729MTRPBF Power MOSFET International Rectifier

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IRF6729MTRPBF Features

IRF6729MTRPBF General Description

Datasheet Details

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