Description
The IRF6729MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- ent (A)
100
100 10msec 10 DC 1
100µsec 1msec
10 T J = 150°C 1 T J = 25°C T J = -40°C VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-to-Drain Voltage (V)
TA = 25°C TJ = 150°C
Single Pulse 0.1 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
200
Fig11. Maximum Safe Operating Area
Typical VGS(th) Gate threshold Voltage (V)
2.4
ID, Drain Current (A)
150
2.2
2.0 ID = 10mA 1.8
100
50
1.6
0 25 50 75 100.
IRF6729MTRPBF Datasheet
