IRGB420 Datasheet, Transistor, International Rectifier

IRGB420 Features

  • Transistor
  • Switching-loss rating includes all "tail" losses
  • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT

PDF File Details

Part number:

IRGB420

Manufacturer:

International Rectifier

File Size:

164.19kb

Download:

📄 Datasheet

Description:

Insulated gate bipolar transistor. Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar

Datasheet Preview: IRGB420 📥 Download PDF (164.19kb)
Page 2 of IRGB420 Page 3 of IRGB420

IRGB420 Application

  • Applications TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C T

TAGS

IRGB420
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

📁 Related Datasheet

IRGB420U - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 9.784A IRGB420U INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all tail losses • Optimized for high operating fre.

IRGB420UD2 - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 9.1066 IRGB420UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all tail loss.

IRGB4045DPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum J.

IRGB4055PBF - PDP TRENCH IGBT (International Rectifier)
PD - 97058B PDP TRENCH IGBT IRGB4055PbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP appli.

IRGB4056DPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching loss.

IRGB4059DPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum J.

IRGB4060DPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
.. PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low V.

IRGB4061DPbF - IGBT (International Rectifier)
PD - 97189B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching loss.

IRGB4062DPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IG.

IRGB4064DPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum J.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts