IRGB420

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

IRGB420 Features

* Switching-loss rating includes all "tail" losses

* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 7.5A n-channel Description Insulated Gate Bipolar Transistors (IGBT

IRGB420 General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGB420 Datasheet (164.19 KB)

IRGB420 Datasheet Preview — Preview of IRGB420 PDF

Datasheet Details

Part number:

IRGB420

Manufacturer:

International Rectifier

File Size:

164.19 KB

Description:

Insulated gate bipolar transistor.

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IRGB420 INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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IRGB420 Features

IRGB420 General Description

Datasheet Details

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