IRGB420
International Rectifier
164.19kb
Insulated gate bipolar transistor. Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar
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IRGB420U - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 9.784A
IRGB420U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Switching-loss rating includes all tail losses • Optimized for high operating fre.
IRGB420UD2 - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 9.1066
IRGB420UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Switching-loss rating includes all tail loss.
IRGB4045DPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum J.
IRGB4055PBF - PDP TRENCH IGBT
(International Rectifier)
PD - 97058B
PDP TRENCH IGBT IRGB4055PbF
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery
circuits in PDP appli.
IRGB4056DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 97188A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology • Low switching loss.
IRGB4059DPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum J.
IRGB4060DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD - 97073B
IRGB4060DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• • • • • • • • • • Low V.
IRGB4061DPbF - IGBT
(International Rectifier)
PD - 97189B
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology • Low switching loss.
IRGB4062DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) Trench IG.
IRGB4064DPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum J.