IRGP4069-EPbF Features
* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction Temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA
* 100% of The Parts Tested for ILM
* Positive VCE (ON) Temperature Coefficient
* Tight Parameter
IRGP4069PbF-InternationalRectifier.pdf
Datasheet Details
IRGP4069-EPbF, IRGP4069PbF
International Rectifier
263.06 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGP4069-EPbF, IRGP4069PbF.
Please refer to the document for exact specifications by model.
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IRGP4069-EPbF Distributor
