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IRGP4069D-EPbF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* Low VCE (ON) Trench IGBT Technology

* Low Switching Losses

* Maximum Junction Temperature 175 °C

* 5 μS short circuit SOA

* Square RBSOA

* 100% of The Parts Tested for ILM

* Positive VCE (ON) Temperature Coefficient

* Tight Parameter

IRGP4069D-EPbF

International Rectifier

303.95 KB

Insulated gate bipolar transistor.

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