IRGP4069D-EPbF Features
* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction Temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA
* 100% of The Parts Tested for ILM
* Positive VCE (ON) Temperature Coefficient
* Tight Parameter
IRGP4069DPbF-InternationalRectifier.pdf
Datasheet Details
IRGP4069D-EPbF, IRGP4069DPbF
International Rectifier
303.95 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGP4069D-EPbF, IRGP4069DPbF.
Please refer to the document for exact specifications by model.
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IRGP4069D-EPbF Distributor
