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IRGP4069D-EPbF Datasheet - International Rectifier

IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR

IRGP4069D-EPbF Features

* Low VCE (ON) Trench IGBT Technology

* Low Switching Losses

* Maximum Junction Temperature 175 °C

* 5 μS short circuit SOA

* Square RBSOA

* 100% of The Parts Tested for ILM

* Positive VCE (ON) Temperature Coefficient

* Tight Parameter

IRGP4069D-EPbF Datasheet (303.95 KB)

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Datasheet Details

Part number:

IRGP4069D-EPbF

Manufacturer:

International Rectifier

File Size:

303.95 KB

Description:

Insulated gate bipolar transistor.

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IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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