IRGP4690D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4690DPbF IRGP4690D-EPbF
VCES = 600V IC = 90A, TC = 100°C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
CC
C
tSC ≥ 5μs,.
IRGP4620D-EPbF - IGBT
(Infineon)
VCES = 600V IC = 20A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.55V @ IC = 12A
Applications • Industrial Motor Drive • Inverters • UPS • W.
IRGP4630-EDPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 30A, TC =100°C
C C.
IRGP4630D-EPbf - IGBT
(Infineon)
VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A
Applications • Industrial Motor Drive • Inverters • UPS • W.
IRGP4630DPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 30A, TC =100°C
C C.
IRGP4630DPbf - IGBT
(Infineon)
VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A
Applications • Industrial Motor Drive • Inverters • UPS • W.