IRGSL4B60KD1PbF, IRGS4B60KD1PBF Insulated Gate Bipolar Transistor

International Rectifier

Description

PD - 95616A IRGB4B60KD1PbF IRGS4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF ULTRAFAST SOFT RECOVERY DIODE .

📥 Download Datasheet

IRGSL4B60KD1PbF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRGSL4B60KD1PbF, IRGS4B60KD1PBF. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IRGSL4B60KD1PbF, IRGS4B60KD1PBF
Manufacturer: International Rectifier
File Size: 434.12 KB
Datasheet: IRGS4B60KD1PBF-InternationalRectifier.pdf
Description: Insulated Gate Bipolar Transistor
Note: This datasheet PDF includes multiple part numbers: IRGSL4B60KD1PbF, IRGS4B60KD1PBF.
Please refer to the document for exact specifications by model.

Features

* C VCES = 600V
* Low VCE (on) Non Punch Through IGBT Technology.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Positive VCE (on) Temperature Coefficient.
* Maximum Junction Temperature rated at 175°C.
* Lead-Free G E n-channel IC = 7.6A, TC=100

IRGSL4B60KD1PbF Distributors

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IRGS4B60KD1PBF Insulated Gate Bipolar Transistor International Rectifier

International Rectifier IRGSL4B60KD1PbF-like datasheet