IRGSL6B60K Features
* Low VCE (on) Non Punch Through IGBT Technology.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits
* Benchmark E
IRGB6B60K_InternationalRectifier.pdf
Datasheet Details
IRGSL6B60K, IRGB6B60K
International Rectifier
285.73 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGSL6B60K, IRGB6B60K.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGSL6B60KDPbF Insulated Gate Bipolar Transistor (International Rectifier)
IRGSL6B60KPbF Insulated Gate Bipolar Transistor (International Rectifier)
IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGSL10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGSL14C40L INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGSL14C40LPBF IGBT (International Rectifier)
IRGSL6B60K Distributor
