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IRGSL6B60KDPbF, IRGS6B60KDPBF Insulated Gate Bipolar Transistor

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Description

PD - 95229C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C .

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This datasheet PDF includes multiple part numbers: IRGSL6B60KDPbF, IRGS6B60KDPBF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRGSL6B60KDPbF, IRGS6B60KDPBF
Manufacturer
International Rectifier
File Size
310.35 KB
Datasheet
IRGS6B60KDPBF-InternationalRectifier.pdf
Description
Insulated Gate Bipolar Transistor
Note
This datasheet PDF includes multiple part numbers: IRGSL6B60KDPbF, IRGS6B60KDPBF.
Please refer to the document for exact specifications by model.

Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10μs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Lead-Free G E n-channel IRGB

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