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IRF2807SPbF, IRF2807LPbF HEXFET Power MOSFET

IRF2807SPbF Description

Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Le.
l l IRF2807SPbF IRF2807LPbF D PD - 95945 HEXFET® Power MOSFET VDSS = 75V RDS(on) = 13mΩ S G www.

IRF2807SPbF Features

* or Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRF2807S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W

IRF2807SPbF Applications

* because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF2807L) is available for lowprofile applications. Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to

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This datasheet PDF includes multiple part numbers: IRF2807SPbF, IRF2807LPbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRF2807SPbF, IRF2807LPbF
Manufacturer
International Rectifier
File Size
295.43 KB
Datasheet
IRF2807LPbF_InternationalRectifier.pdf
Description
HEXFET Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRF2807SPbF, IRF2807LPbF.
Please refer to the document for exact specifications by model.

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HEXFET Power MOSFET International Rectifier
International Rectifier IRF2807SPbF-like datasheet