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IRF6635TRPbF, IRF6635PbF DirectFET Power MOSFET

IRF6635TRPbF Description

PD - 97086 IRF6635PbF IRF6635TRPbF www.DataSheet4U.com l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Speci.
The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.

IRF6635TRPbF Features

* rward Voltage 200 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250µA 175 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID, Drain Current (A) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C

IRF6635TRPbF Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRF6635TRPbF, IRF6635PbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRF6635TRPbF, IRF6635PbF
Manufacturer
International Rectifier
File Size
268.39 KB
Datasheet
IRF6635PbF_InternationalRectifier.pdf
Description
DirectFET Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRF6635TRPbF, IRF6635PbF.
Please refer to the document for exact specifications by model.

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DirectFET Power MOSFET International Rectifier
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