IRF6668TRPBF Description
www.DataSheet4U.com PD - 97232A IRF6668PbF IRF6668TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l l l l l l l l l l .IRF6668TRPBF Features
* ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 100 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature ID 80 TOP 4.3A 7.6A BOTTOM 23A 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. DraiIRF6668TRPBF Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma
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