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IRF7805A - N-Channel Power MOSFET

IRF7805A Description

PD * 91746C IRF7805/IRF7805A HEXFET® Chip-Set for DC-DC Converters * * * * N Channel Application Specific MOS.
These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

IRF7805A Features

* IRF7805 IRF7805A Vds 30V 30V Rds(on) 11mΩ 11mΩ Qg 31nC 31nC Qsw 11.5nC Qoss 36nC 36nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range Co

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N-Channel Power MOSFET International Rectifier
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