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IRG4BC30FD1 INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC30FD1 Description

PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C .

IRG4BC30FD1 Features

* • Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra low recovery characteristics. •

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Datasheet Details

Part number
IRG4BC30FD1
Manufacturer
International Rectifier
File Size
387.31 KB
Datasheet
IRG4BC30FD1_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG4BC30FD1-like datasheet