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IRG4BC30S-S INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC30S-S Description

PD - 94069 IRG4BC30S-S INSULATED GATE BIPOLAR TRANSISTOR .

IRG4BC30S-S Features

* Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz)
* Generation 4 IGBT design provides tight parameter distribution and high efficiency C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A n-channel Benefits

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Datasheet Details

Part number
IRG4BC30S-S
Manufacturer
International Rectifier
File Size
152.77 KB
Datasheet
IRG4BC30S-S_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG4BC30S-S-like datasheet