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IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR

IRGMC50F Description

www.DataSheet4U.com PD -90718B IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR .
n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar trans.

IRGMC50F Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 600V G E VCE(on) max = 1.7V @VGE = 15V, IC = 30A Desc

IRGMC50F Applications

* The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. TO-254AA Absolute Maximum Ratings Parameter VCES IC @

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Datasheet Details

Part number
IRGMC50F
Manufacturer
International Rectifier
File Size
574.07 KB
Datasheet
IRGMC50F_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRGMC50F-like datasheet