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IRGR4045DPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGR4045DPBF Description

IRGR4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE * * * * * * * * * * C VCES .

IRGR4045DPBF Features

* Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5μs SCSOA Square RBSOA 100% of the parts tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant G E Tjm

IRGR4045DPBF Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation
* Low EMI G D-Pak IRGR4045DPbF G Gate C Colletor E Emitter Absolute Maxim

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International Rectifier IRGR4045DPBF-like datasheet