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HGT1S5N120BNDS

21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

HGT1S5N120BNDS Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high

HGT1S5N120BNDS Datasheet (89.22 KB)

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Datasheet Details

Part number:

HGT1S5N120BNDS

Manufacturer:

Intersil Corporation

File Size:

89.22 KB

Description:

21a/ 1200v/ npt series n-channel igbts with anti-parallel hyperfast diodes.
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 File Number 4597.2 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyper.

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HGT1S5N120BNDS 21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes Intersil Corporation

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