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HGT1S5N120BNDS Datasheet - Intersil Corporation

HGT1S5N120BNDS - 21A 1200V NPT Series N-Channel IGBT

HGT1S5N120BNDS Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high

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Datasheet Details

Part number:

HGT1S5N120BNDS

Manufacturer:

Intersil Corporation

File Size:

89.22 KB

Description:

21a 1200v npt series n-channel igbt.

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