Datasheet Specifications
- Part number
- HGT1S5N120BNDS
- Manufacturer
- Intersil Corporation
- File Size
- 89.22 KB
- Datasheet
- HGT1S5N120BNDS_IntersilCorporation.pdf
- Description
- 21A 1200V NPT Series N-Channel IGBT
Description
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 File Number 4597.2 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyper.
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many highHGT1S5N120BNDS Distributors
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