HGT1S5N120BNDS Datasheet, Diodes, Intersil Corporation

HGT1S5N120BNDS Features

• Diodes of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development ty

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HGT1S5N120BNDS

Manufacturer:

Intersil Corporation

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89.22kb

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📄 Datasheet

Description:

21a/ 1200v/ npt series n-channel igbts with anti-parallel hyperfast diodes.

HGT1S5N120BNDS Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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