HGT1S5N120BNDS - 21A 1200V NPT Series N-Channel IGBT
HGT1S5N120BNDS Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high
