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HGT1S5N120CNDS Datasheet - Intersil Corporation

HGT1S5N120CNDS - 25A 1200V NPT Series N-Channel IGBT

HGT1S5N120CNDS Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental type TA49309. The diode used in anti-parallel is developmental type TA49058. The IGBT is ideal for many high voltage s

HGT1S5N120CNDS_IntersilCorporation.pdf

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Datasheet Details

Part number:

HGT1S5N120CNDS

Manufacturer:

Intersil Corporation

File Size:

87.10 KB

Description:

25a 1200v npt series n-channel igbt.

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