HGT1S5N120CNDS - 25A 1200V NPT Series N-Channel IGBT
HGT1S5N120CNDS Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental type TA49309. The diode used in anti-parallel is developmental type TA49058. The IGBT is ideal for many high voltage s
