Datasheet Specifications
- Part number
- HGT1S5N120CNDS
- Manufacturer
- Intersil Corporation
- File Size
- 87.10 KB
- Datasheet
- HGT1S5N120CNDS_IntersilCorporation.pdf
- Description
- 25A 1200V NPT Series N-Channel IGBT
Description
HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 File Number 4598.2 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperf.
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental type TA49309. The diode used in anti-parallel is developmental type TA49058. The IGBT is ideal for many high voltage sHGT1S5N120CNDS Distributors
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