* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental type TA49309. The diode used in anti-parallel is developmental type TA49058. The IGBT is ideal for many high voltage s
HGT1S5N120CNDS Datasheet (87.10 KB)
HGT1S5N120CNDS
Intersil Corporation
87.10 KB
25a/ 1200v/ npt series n-channel igbt with anti-parallel hyperfast diode.
HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS
Data Sheet January 2000 File Number 4598.2
25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperf.
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