HGT1S5N120CNDS Datasheet, Diode, Intersil Corporation

HGT1S5N120CNDS Features

• Diode of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental typ

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Part number:

HGT1S5N120CNDS

Manufacturer:

Intersil Corporation

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87.10kb

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📄 Datasheet

Description:

25a/ 1200v/ npt series n-channel igbt with anti-parallel hyperfast diode.

HGT1S5N120CNDS Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drive

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