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HGT1S5N120BNS Datasheet - Intersil Corporation

HGT1S5N120BNS - 21A 1200V NPT Series N-Channel IGBTs

HGT1S5N120BNS Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as:

HGT1S5N120BNS_IntersilCorporation.pdf

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Datasheet Details

Part number:

HGT1S5N120BNS

Manufacturer:

Intersil Corporation

File Size:

82.53 KB

Description:

21a 1200v npt series n-channel igbts.

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