* of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49347. The diode used i
HGT5A40N60A4D Datasheet (100.89 KB)
HGT5A40N60A4D
Intersil Corporation
100.89 KB
600v/ smps series n-channel igbt with anti-parallel hyperfast diode.
HGT5A40N60A4D
Data Sheet February 2000 File Number 4783.1
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT5A40N60A4D is a .
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