* 32A, 600V
* Latch Free Operation
* Typical Fall Time 620ns
* High Input Impedance
* Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high
HGTA32N60E2 Datasheet (31.92 KB)
HGTA32N60E2
Intersil Corporation
31.92 KB
32a/ 600v n-channel igbt.
HGTA32N60E2
April 1995
32A, 600V N-Channel IGBT
Package
JEDEC MO-093AA (5 LEAD TO-218)
5 EMITTER COLLECTOR (FLANGE) 4 EMITTER KELVIN 3 COLLECTOR 2 NO.
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