* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching application
HGTD7N60A4S Datasheet (168.07 KB)
HGTD7N60A4S
Intersil Corporation
168.07 KB
600v/ smps series n-channel igbt.
TM HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 Data Sheet June 2000 File Number 4826.2 600V, SMPS Series N-Channel IGBT The HGTD7N60A4S, HGT1S.
📁 Related Datasheet
HGTD7N60B3S 14A/ 600V/ UFS Series N-Channel IGBTs (Intersil Corporation)
HGTD7N60C3 14A/ 600V/ UFS Series N-Channel IGBTs (Fairchild Semiconductor)
HGTD7N60C3 UFS Series N-Channel IGBT (HARRIS)
HGTD7N60C3S UFS Series N-Channel IGBT (HARRIS)
HGTD7N60C3S UFS Series N-Channel IGBTs (Fairchild Semiconductor)
HGTD7N60C3S UFS Series N-Channel IGBTs (Intersil)
HGTD10N40F1 10A/ 400V and 500V N-Channel IGBTs (Intersil Corporation)
HGTD10N40F1S 10A/ 400V and 500V N-Channel IGBTs (Intersil Corporation)
HGTD10N50F1 10A/ 400V and 500V N-Channel IGBTs (Intersil Corporation)
HGTD10N50F1S 10A/ 400V and 500V N-Channel IGBTs (Intersil Corporation)
