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HGTD8P50G1 8A/ 500V P-Channel IGBTs

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Description

HGTD8P50G1, HGTD8P50G1S March 1997 8A, 500V P-Channel IGBTs Package JEDEC TO-251AA EMITTER COLLECTOR GATE .
The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipa.

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Datasheet Specifications

Part number
HGTD8P50G1
Manufacturer
Intersil Corporation
File Size
110.13 KB
Datasheet
HGTD8P50G1_IntersilCorporation.pdf
Description
8A/ 500V P-Channel IGBTs

Features

* 8A, 500V
* 3.7V VCE(SAT)
* Typical Fall Time - 1800ns
* High Input Impedance

Applications

* such as switching regulators and motor drives. This P- channel IGBT can be paired with N-Channel IGBTs to form a complementary power switch and it is ideal for half bridge circuit configurations. These types can be operated directly from low power integrated circuits. PACKAGING AVAILABILITY PART NUMB

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