HGTD8P50G1S 8A/ 500V P-Channel IGBTs

Intersil Corporation

Description

HGTD8P50G1, HGTD8P50G1S March 1997 8A, 500V P-Channel IGBTs Package JEDEC TO-251AA EMITTER COLLECTOR GATE .
The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipa.

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Datasheet Specifications

Part number: HGTD8P50G1S
Manufacturer: Intersil Corporation
File Size: 110.13 KB
Datasheet: HGTD8P50G1S_IntersilCorporation.pdf
Description: 8A/ 500V P-Channel IGBTs

Features

* 8A, 500V
* 3.7V VCE(SAT)
* Typical Fall Time - 1800ns
* High Input Impedance

Applications

* such as switching regulators and motor drives. This P- channel IGBT can be paired with N-Channel IGBTs to form a complementary power switch and it is ideal for half bridge circuit conﬁgurations. These types can be operated directly from low power integrated circuits. PACKAGING AVAILABILITY PART NUMB

HGTD8P50G1S Distributors

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HGTD8P50G1S 500V P-Channel IGBTs Intersil Corporation

Intersil Corporation HGTD8P50G1S-like datasheet