HGTD8P50G1S

8A/ 500V P-Channel IGBTs

Intersil Corporation

HGTD8P50G1S Features

* 8A, 500V

* 3.7V VCE(SAT)

* Typical Fall Time - 1800ns

* High Input Impedance

* TJ = +150oC (FLANGE) COLLECTOR Description The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage

HGTD8P50G1S General Description

The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drives. This P- channel IGBT can be paired with N-Channel IGBTs to form a complementary power.

HGTD8P50G1S Datasheet (110.13 KB)

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Datasheet Details

Part number:

HGTD8P50G1S

Manufacturer:

Intersil Corporation

File Size:

110.13 KB

Description:

8a/ 500v p-channel igbts.

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HGTD8P50G1S 500V P-Channel IGBTs Intersil Corporation

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HGTD8P50G1S Features

HGTD8P50G1S General Description

Datasheet Details

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HGTD8P50G1S Distributor