HGTD8P50G1S Datasheet, Igbts, Intersil Corporation

HGTD8P50G1S Features

• Igbts
• 8A, 500V
• 3.7V VCE(SAT)
• Typical Fall Time - 1800ns
• High Input Impedance
• TJ = +150oC (FLANGE) COLLECTOR Description The HGTD8P50G1 and

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Part number:

HGTD8P50G1S

Manufacturer:

Intersil Corporation

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📄 Datasheet

Description:

8a/ 500v p-channel igbts. The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltag

HGTD8P50G1S Application

• Applications such as switching regulators and motor drives. This P- channel IGBT can be paired with N-Channel IGBTs to form a complementary power sw

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HGTD8P50G1S

Intersil Corporation

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