* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
HGTG20N60C3 Datasheet (141.56 KB)
HGTG20N60C3
Intersil Corporation
141.56 KB
N-channel igbt.
Data Sheet
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
December 2001
45A, 600V, UFS Series N-Channel IGBT
This family of MOS gated high voltage switchin.
📁 Related Datasheet
HGTG20N60C3 N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60C3D N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60C3D N-Channel IGBT (Intersil Corporation)
HGTG20N60C3R N-Channel IGBTs (Intersil)
HGTG20N60C3R N-Channel IGBTs (HARRIS)
HGTG20N60A4 N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60A4 N-Channel IGBT (Intersil Corporation)
HGTG20N60A4 IGBT (ON Semiconductor)
HGTG20N60A4D N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60A4D N-Channel IGBT (ON Semiconductor)
