HGTG40N60A4 Datasheet, Igbt, Intersil Corporation

HGTG40N60A4 Features

• Igbt of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage

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HGTG40N60A4

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Intersil Corporation

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📄 Datasheet

Description:

N-channel igbt.

HGTG40N60A4 Application

• Applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode

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HGTG40N60A4

Intersil Corporation

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