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HGTP5N120 - N-Channel IGBT

Intersil Corporation

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Datasheet Details

Part number	HGTP5N120
Manufacturer	Intersil Corporation
File Size	89.22 KB
Description	N-Channel IGBT
Datasheet	HGTP5N120_IntersilCorporation.pdf

HGTP5N120 Product details

Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |