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HGTP7N60B3D

N-Channel IGBT

HGTP7N60B3D Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current. The IGBT is developmental type TA49190. The d

HGTP7N60B3D Datasheet (94.32 KB)

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Datasheet Details

Part number:

HGTP7N60B3D

Manufacturer:

Intersil Corporation

File Size:

94.32 KB

Description:

N-channel igbt.
HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 File Number 4413.2 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HG.

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HGTP7N60B3D N-Channel IGBT Intersil Corporation

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