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IRF614

N-Channel Power MOSFET

IRF614 Features

* 2.0A, 250V

* rDS(ON) = 2.0Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for S

IRF614 General Description

This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. This power MOSFET is designed for applications such as switching regu.

IRF614 Datasheet (45.10 KB)

Preview of IRF614 PDF

Datasheet Details

Part number:

IRF614

Manufacturer:

Intersil Corporation

File Size:

45.10 KB

Description:

N-channel power mosfet.

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IRF614 N-Channel Power MOSFET Intersil Corporation

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