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IRF614 - N-Channel Power MOSFET

IRF614 Description

IRF614 January 1998 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET .
This is an N-Channel enhancement mode silicon gate power field effect transistor.

IRF614 Features

* 2.0A, 250V
* rDS(ON) = 2.0Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for S

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Datasheet Details

Part number
IRF614
Manufacturer
Intersil Corporation
File Size
45.10 KB
Datasheet
IRF614_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
Intersil Corporation IRF614-like datasheet