IRF646 Datasheet - Intersil Corporation

IRF646 N-Channel Power MOSFET

IRF646 Data Sheet June 1999 File Number 2169.3 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching tr.

IRF646 Features

* 14A, 275V

* rDS(ON) = 0.280Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* 275VDC Rating-120VAC Line System Operation

IRF646 Datasheet (60.50 KB)

IRF646 Datasheet Preview — Preview of IRF646 PDF

Datasheet Details

Part number:

IRF646

Manufacturer:

Intersil Corporation

File Size:

60.50 KB

Description:

N-channel power mosfet.

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IRF646 N-Channel Power MOSFET Intersil Corporation

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