* 3.3A, 200V
* rDS(ON) = 1.500Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for
IRF610
Intersil Corporation
55.30 KB
N-channel power mosfet.
IRF610 Data Sheet June 1999 File Number 1576.3 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field .
📁 Related Datasheet
IRF610 N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF610 N-Channel Power MOSFET (Fairchild Semiconductor)
IRF610 Power MOSFET (Vishay)
IRF6100 HEXFET Power MOSFET (International Rectifier)
IRF6100PBF HEXFET Power MOSFET (International Rectifier)
IRF610A N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF610A Advanced Power MOSFET (Fairchild Semiconductor)
IRF610B 200V N-Channel MOSFET (Fairchild Semiconductor)
IRF610L Power MOSFET (Vishay)
IRF610S Power MOSFET (Vishay)
