IRF610 Datasheet - Intersil Corporation

IRF610 N-Channel Power MOSFET

IRF610 Data Sheet June 1999 File Number 1576.3 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching t.

IRF610 Features

* 3.3A, 200V

* rDS(ON) = 1.500Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRF610_IntersilCorporation.pdf

IRF610 Datasheet Preview — Preview of IRF610 PDF

Datasheet Details

Part number:

IRF610

Manufacturer:

Intersil Corporation

File Size:

55.30 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

IRF610 N-Channel Mosfet Transistor (Inchange Semiconductor)

IRF610 N-Channel Power MOSFET (Fairchild Semiconductor)

IRF610 Power MOSFET (Vishay)

IRF6100 HEXFET Power MOSFET (International Rectifier)

IRF6100PBF HEXFET Power MOSFET (International Rectifier)

IRF610A N-Channel Mosfet Transistor (Inchange Semiconductor)

IRF610A Advanced Power MOSFET (Fairchild Semiconductor)

IRF610B 200V N-Channel MOSFET (Fairchild Semiconductor)

TAGS

IRF610 IRF610 N-Channel Power MOSFET Intersil Corporation

IRF610 Distributor