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IRF610 - N-Channel Power MOSFET

IRF610 Description

IRF610 Data Sheet June 1999 File Number 1576.3 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field .

IRF610 Features

* 3.3A, 200V
* rDS(ON) = 1.500Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for

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Datasheet Details

Part number
IRF610
Manufacturer
Intersil Corporation
File Size
55.30 KB
Datasheet
IRF610_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
Intersil Corporation IRF610-like datasheet

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