* 3.3A, 200V
* rDS(ON) = 1.500Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for
IRF610
Intersil Corporation
55.30 KB
N-channel power mosfet.
IRF610
Data Sheet June 1999 File Number
1576.3
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field .
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