IRFC9110 Datasheet - Intersil Corporation

IRFC9110 P-Channel Power MOSFET

IRFD9110 www.DataSheet4U.com Data Sheet July 1999 File Number 2215.3 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high.

IRFC9110 Features

* 0.7A, 100V

* rDS(ON) = 1.200Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9110

IRFC9110 Datasheet (83.03 KB)

IRFC9110 Datasheet Preview — Preview of IRFC9110 PDF

Datasheet Details

Part number:

IRFC9110

Manufacturer:

Intersil Corporation

File Size:

83.03 KB

Description:

P-channel power mosfet.

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TAGS

IRFC9110 P-Channel Power MOSFET Intersil Corporation

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