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JANSR2N7408 Datasheet - Intersil Corporation

JANSR2N7408 Formerly Available As FSF450R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs

JANSR2N7408 Data Sheet December 1998 File Number 4637 Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which ar.

JANSR2N7408 Features

* 9A, 500V, rDS(ON) = 0.600Ω

* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Rat

JANSR2N7408_IntersilCorporation.pdf

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Datasheet Details

Part number:

JANSR2N7408

Manufacturer:

Intersil Corporation

File Size:

55.33 KB

Description:

Formerly available as fsf450r4/ radiation hardened/ segr resistant/ n-channel power mosfets.

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JANSR2N7408 JANSR2N7408 Formerly Available FSF450R4 Radiation Hardened SEGR Resistant N-Channel Power MOSFETs Intersil Corporation

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